CGH40120F Datasheet (CREE) - RF Power GaN HEMT

CGH40120F, RF Power GaN HEMT

CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits.

The transistor is available in a flange package.

Package Type s: 440193 PN: CGH4

CGH40120F Features

* Up to 2.5 GHz Operation

* 20 dB Small Signal Gain at 1.0 GHz

* 15 dB Small Signal Gain at 2.0 GHz

* 120 W Typical PSAT

* 70 % Efficiency at PSAT

* 28 V Operation APPLICATIONS

* 2-Way Private Radio

* Broadband Amplifiers