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CGH40006S - RF Power GaN HEMT

MACOM

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Datasheet Details

Part number	CGH40006S
Manufacturer	MACOM
File Size	1.15 MB
Description	RF Power GaN HEMT
Datasheet	CGH40006S-MACOM.pdf

CGH40006S Product details

Description

The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Features

Up to 6 GHz Operation.
13 dB Small Signal Gain at 2.0 GHz.
11 dB Small Signal Gain at 6.0 GHz.
8 W typical at PIN = 32 dBm.
65% Efficiency at PIN = 32 dBm.
28 V Operation.
3mm x 3mm Package.

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Published: Dec 30, 2024 |