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CGH40006P - RF Power GaN HEMT

MACOM

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Datasheet Details

Part number	CGH40006P
Manufacturer	MACOM
File Size	1.53 MB
Description	RF Power GaN HEMT
Datasheet	CGH40006P-MACOM.pdf

CGH40006P Product details

Description

The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Features

Up to 6 GHz Operation.
13 dB Small Signal Gain at 2.0 GHz.
11 dB Small Signal Gain at 6.0 GHz.
8 W typical at PIN = 32 dBm.
28 V Operation.

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Published: May 13, 2024 |