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CGH40010 - RF Power GaN HEMT

Description

The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

  • Up to 6 GHz Operation.
  • 16 dB Small Signal Gain at 2.0 GHz.
  • 14 dB Small Signal Gain at 4.0 GHz.
  • 13 W typical PSAT.
  • 65 % Efficiency at PSAT.
  • 28 V Operation.

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CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Description The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screwdown, flange and solder-down, pill packages. Package Type: 440166 & 440196 PNs: CGH40010F & CGH40010P Features • Up to 6 GHz Operation • 16 dB Small Signal Gain at 2.0 GHz • 14 dB Small Signal Gain at 4.
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