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CGH40180PP - 180W RF Power GaN HEMT

Description

The CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

  • Up to 2.5 GHz Operation.
  • 20 dB Small Signal Gain at 1.0 GHz.
  • 15 dB Small Signal Gain at 2.0 GHz.
  • 220 W typical PSAT.
  • 70% Efficiency at PSAT.
  • 28 V Operation.

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CGH40180PP 180 W, RF Power GaN HEMT Description The CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. Package Types: 440199 PN: CGH40180PP Features • Up to 2.5 GHz Operation • 20 dB Small Signal Gain at 1.0 GHz • 15 dB Small Signal Gain at 2.
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