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MwT-PH7F Medium Power AlGaAs/InGaAs pHEMT

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Description

MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT .
Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transist.

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Datasheet Specifications

Part number
MwT-PH7F
Manufacturer
CML
File Size
618.92 KB
Datasheet
MwT-PH7F-CML.pdf
Description
Medium Power AlGaAs/InGaAs pHEMT

Features

* 24.5 dBm of Power at 18 GHz
* 15 dB typical Small Signal Gain at 18 GHz
* 45% typical PAE at 18 GHz
* 0.25 x 250 Micron Refractory Metal/Gold Gate
* Excellent for High Gain, and High Power Added Efficiency
* Ideal for Commercial, Military, Hi-Rel S

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