Datasheet Details
| Part number | MwT-PH33F |
|---|---|
| Manufacturer | CML |
| File Size | 627.01 KB |
| Description | Medium Power AlGaAs/InGaAs pHEMT |
| Datasheet |
 MwT-PH33F Datasheet
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General Description
The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range.
Key Features
- 24 dBm of Power at 18 GHz.
- 14 dB Small Signal Gain at 18 GHz.
- 45% typical PAE at 18 GHz.
- 0.25 x 300 Micron Refractory Metal/Gold Gate.
- Excellent for Medium Power, Gain, and High Power Added Efficiency.
- Ideal for Commercial, Military, Hi-Rel Space.