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MwT-PH11F - 12-GHz High Power AlGaAs/InGaAs pHEMT

General Description

The MwT-PH11F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 2400 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12 GHz frequency range.

Key Features

  • 33 dBm of Power at 12 GHz.
  • 12 dB Small Signal Gain at 12 GHz.
  • 45% PAE at 12 GHz.
  • 0.25 x 2400 Micron Refractory Metal/Gold Gate.
  • Excellent for High Power, and High Power Added Efficiency.
  • Ideal for Commercial, Military, Hi-Rel Space.

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Datasheet Details

Part number MwT-PH11F
Manufacturer MWT
File Size 1.86 MB
Description 12-GHz High Power AlGaAs/InGaAs pHEMT
Datasheet download datasheet MwT-PH11F Datasheet

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Other Datasheets by MWT

Part Number Description
MwT-PH11FV 12-GHz High Power AlGaAs/InGaAs pHEMT
MwT-5F Dual Gate GaAs FET
MwT-7F 26GHz Medium Power GaAs FET
MwT-LN600 26 GHz Super Low Noise pHEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MwT-PH11F/MwT-PH11FV 12 GHz High Power AlGaAs/InGaAs pHEMT Features: • 33 dBm of Power at 12 GHz • 12 dB Small Signal Gain at 12 GHz • 45% PAE at 12 GHz • 0.25 x 2400 Micron Refractory Metal/Gold Gate • Excellent for High Power, and High Power Added Efficiency • Ideal for Commercial, Military, Hi-Rel Space Applications • Available with or without via holes Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns Description: The MwT-PH11F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 2400 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12 GHz frequency range.