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MwT-7F - 26GHz Medium Power GaAs FET

General Description

The MwT-7F is a GaAs MESFET device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range.

Key Features

  • 21 dBm Output Power at 12 GHz.
  • 15 dB Small Signal Gain at 12 GHz.
  • Excellent for High Linear Gain or Oscillator.

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Datasheet Details

Part number MwT-7F
Manufacturer MWT
File Size 1.34 MB
Description 26GHz Medium Power GaAs FET
Datasheet download datasheet MwT-7F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MwT-7F 26 GHz Medium Power GaAs FET Features: • 21 dBm Output Power at 12 GHz • 15 dB Small Signal Gain at 12 GHz • Excellent for High Linear Gain or Oscillator Applications • Ideal for Commercial, Military, Hi-Rel Space Applications • 0.25 Micron Refractory Metal/Gold Gate • 250 Micron Gate Width • Choice of Chip and Three Package Types Chip Dimensions: 365 x 250 microns Chip Thickness: 100 microns Description: The MwT-7F is a GaAs MESFET device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range. MwT-7F is equally effective for either wideband (e.g., 6 to 18 GHz) or narrow-band applications.