MwT-11F - High Linearity GaAs FET

CML

General Description

The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm.

Key Features

32 dBm Output Power at 8 GHz.
9 dB Typical Small Signal Gain at 8 GHz.
0.25 x 2400 Micron Refractory Metal/Gold Gate.
Excellent for Linear High Power and High Power Added Efficiency.

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MwT-11F high linearity gaas fet by CML - Datasheet Preview

Datasheet Details

Part number	MwT-11F
Manufacturer	CML
File Size	829.38 KB
Description	High Linearity GaAs FET
Datasheet	MwT-11F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MwT-11F High Power, High Linearity GaAs FET Features: • 32 dBm Output Power at 8 GHz • 9 dB Typical Small Signal Gain at 8 GHz • 0.25 x 2400 Micron Refractory Metal/Gold Gate • Excellent for Linear High Power and High Power Added Efficiency Applications • Ideal for Commercial, Military, Hi-Rel Space Applications • Choice of Chip and One Package Type Description: Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm. The device has very good linearity and power added efficiency. All chips are passivated with SiN (Silicon Nitride). RF Specifications: • at Ta= 25°C DC Specifications: • at Ta= 25 °C www.