AO8807 Dual P-Channel FET

Alpha & Omega Semiconductors

Description

AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General .
The AO8807 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AO8807
Manufacturer: Alpha & Omega Semiconductors
File Size: 181.35 KB
Datasheet: AO8807_AlphaOmegaSemiconductors.pdf
Description: Dual P-Channel FET

Features

* VDS (V) = -12V ID = -6.5 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 24mΩ (VGS = -2.5V) RDS(ON) < 30mΩ (VGS = -1.8V) ESD Protected! D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 Rg Rg D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parame

Applications

* OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www. aosmd. com AO8807 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 -ID (A) 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Char

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AO8807 Dual P-Channel FET Alpha & Omega Semiconductors

Alpha & Omega Semiconductors AO8807-like datasheet