AO8801 - Dual P-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

The AO8801 by Alpha & Omega Semiconductors is a Dual P-Channel Enhancement Mode Field Effect Transistor. Below is the official datasheet preview.

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AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor by Alpha & Omega Semiconductors - Datasheet Preview — Official preview page of the **AO8801** Dual P-Channel Enhancement Mode Field Effect Transistor datasheet (Alpha & Omega Semiconductors).

Datasheet Details

Part number	AO8801
Manufacturer	Alpha & Omega Semiconductors
File Size	139.27 KB
Description	Dual P-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8801_AlphaOmegaSemiconductors.pdf
Additional preview pages of the AO8801 datasheet.

AO8801 Product details

Description

The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

Features

VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -4.7 -3.7 -30 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C.

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Other Datasheets by Alpha & Omega Semiconductors

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Published: Aug 29, 2009 |