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AP3414MI 30V N-Channel Enhancement Mode MOSFET

AP3414MI Description

AP3414MI 30V N-Channel Enhancement Mode MOSFET .
The AP3414MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

AP3414MI Applications

* , should be limited by total power dissipation. Max.
* 12 13 2.5
* 1 5 ±100
* 46 92 1 Unit V mΩ V mV/℃ uA nA S Ω nC ns pF A A V 2 AP3414MI REV1.0 Typical Characteristics AP

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Datasheet Details

Part number
AP3414MI
Manufacturer
APM
File Size
604.55 KB
Datasheet
AP3414MI-APM.pdf
Description
30V N-Channel Enhancement Mode MOSFET

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30V N-Channel Enhancement Mode MOSFET APM
APM AP3414MI-like datasheet