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AP3411MI -30V P-Channel Enhancement Mode MOSFET

AP3411MI Description

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AP3411MI -30V P-Channel Enhancement Mode MOSFET The AP3411MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera.

AP3411MI Applications

* , should be limited by total power dissipation. 2 AP3411MI RVE1.0 Typical Characteristics AP3411MI -30V P-Channel Enhancement Mode MOSFET Figure1: Output Characteristics Figure 2: Typical Transfer Characteristics Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode Characteristics

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Datasheet Details

Part number
AP3411MI
Manufacturer
APM
File Size
1.12 MB
Datasheet
AP3411MI-APM.pdf
Description
-30V P-Channel Enhancement Mode MOSFET

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-30V P-Channel Enhancement Mode MOSFET APM
APM AP3411MI-like datasheet