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AP3400EI 30V N-Channel Enhancement Mode MOSFET

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Description

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The AP3400EI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
AP3400EI
Manufacturer
APM
File Size
396.10 KB
Datasheet
AP3400EI-APM.pdf
Description
30V N-Channel Enhancement Mode MOSFET

Features

* VDS = 30V ID =3.0A AP3400EI 30V N-Channel Enhancement Mode MOSFET RDS(ON)

Applications

* , should be limited by total power dissipation. 2 AP3400EI REV1.0 AP3400EI 30V N-Channel Enhancement Mode MOSFET Package Mechanical Data-SOT23L-Single Dim in mm Symbol Min Typ Max A 0.9 1 1.1 A1 0 0.05 0.1 B 1.8 1.9 2 B1 0.95TYP C 0.08 0.115 0.15 D 2.8 2.9 3 E 1.2

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