PED905 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -12V,ID = -15A RDS(ON) <15mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-2.5V RDS(ON) <45mΩ @ VGS=-1.8V RDS(ON) < 80mΩ @ VGS=-1.5V
*Asvanced trench MOSFET process t.
Bottom Drain Contact
D1
6D
D2
5D
GENERAL FEATURES
* VDS = -12V,ID = -15A RDS(ON) <15mΩ @ VGS=-4.5V RDS(ON) < 2.
The PED905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switching application and a wide variety of other applications
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