PED2313N mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =9.5A RDS(ON) = 9 mΩ@ VGS=4.5V RDS(ON) = 11m Ω @ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product.
It is ESD protested.
General Features
* VDS = 20V,ID =9.5A RDS(ON) = 9 mΩ@ VGS=4.5V RDS(ON) = 11m Ω @ VGS=2.5V ESD .
The PED2313N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
General Features.
Image gallery
TAGS