logo

PED2313N Datasheet, semi one

PED2313N mosfet equivalent, n-channel enhancement mode power mosfet.

PED2313N Avg. rating / M : 1.0 rating-11

datasheet Download

PED2313N Datasheet

Features and benefits


* VDS = 20V,ID =9.5A RDS(ON) = 9 mΩ@ VGS=4.5V RDS(ON) = 11m Ω @ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product.

Application

It is ESD protested. General Features
* VDS = 20V,ID =9.5A RDS(ON) = 9 mΩ@ VGS=4.5V RDS(ON) = 11m Ω @ VGS=2.5V ESD .

Description

The PED2313N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features.

Image gallery

PED2313N Page 1 PED2313N Page 2 PED2313N Page 3

TAGS

PED2313N
N-Channel
Enhancement
Mode
Power
MOSFET
PED2310F
PED2310L
PED2310N
semi one

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts