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PED2312A Datasheet, semi one

PED2312A mosfet equivalent, dual n & p-channel enhancement mode power mosfet.

PED2312A Avg. rating / M : 1.0 rating-13

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PED2312A Datasheet

Features and benefits


* P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V
* N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m .

Application

GENERAL FEATURES
* P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V
* N-C.

Description

The PED2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES
* P-Channel VDS .

Image gallery

PED2312A Page 1 PED2312A Page 2 PED2312A Page 3

TAGS

PED2312A
Dual
P-Channel
Enhancement
Mode
Power
MOSFET
PED2312
PED2310F
PED2310L
semi one

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