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PMPB12UNE - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Exposed drain pad for excellent thermal conduction.
  • Tin-plated 100% solderable side pads for optical solder inspection.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMPB12UNE 20 V, N-channel Trench MOSFET 12 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Exposed drain pad for excellent thermal conduction • Tin-plated 100% solderable side pads for optical solder inspection • ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications • LED driver • Power management • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.