PMPB12UNEA
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Trench MOSFET technology
- Side wettable flanks for optical solder inspection
- Electro Static Discharge (ESD) protection > 500 V HBM (class H1B)
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-12
- 12 V
[1]
- - 7.9 A
- 13 18 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
20...
