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PMPB12UNEA - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Trench MOSFET technology.
  • Side wettable flanks for optical solder inspection.
  • ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B).
  • AEC-Q101 qualified 3.

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Datasheet preview – PMPB12UNEA

Datasheet Details

Part number PMPB12UNEA
Manufacturer nexperia
File Size 290.34 KB
Description N-channel MOSFET
Datasheet download datasheet PMPB12UNEA Datasheet
Additional preview pages of the PMPB12UNEA datasheet.

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Full PDF Text Transcription

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PMPB12UNEA 20 V, N-channel Trench MOSFET 26 March 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.
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