Datasheet4U Logo Datasheet4U.com

PMPB11EN - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Very fast switching.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • Tin-plated 100 % solderable side pads for optical solder inspection 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMPB11EN 30V N-channel Trench MOSFET NXP
PMPB10XNE single N-channel Trench MOSFET NXP
PMPB12UN 20V single N-channel Trench MOSFET NXP Semiconductors
PMPB13XNE single N-channel Trench MOSFET NXP
PMPB15XN single N-channel Trench MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
PMPB100ENE N-channel MOSFET
PMPB10EN N-channel MOSFET
PMPB10XNE N-channel MOSFET
PMPB10XNEA N-channel MOSFET
PMPB12EP P-channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMPB11EN 30 V, N-channel Trench MOSFET 12 July 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Very fast switching • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 3. Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management 4. Quick reference data Table 1.