PBSS5240Z transistor equivalent, 2a pnp low vcesat (biss) transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High energy efficiency due to less heat generation
* AE.
* DC-to-DC conversion
* Supply line switching
* Battery charger
* LCD backlighting
* Driver in low s.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4240Z
2. Features and benefits
* Low collector-emitter saturation voltage VCEsat
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