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PBSS5240V - 40 V low VCEsat PNP transistor

Description

PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package.

NPN complement: PBSS4240V.

Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency leading to reduced heat generation.
  • Reduced printed-circuit board area requirements.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements. APPLICATIONS • Power management: – DC-DC converter – Supply line switching – Battery charger – LCD back lighting. • Peripheral driver: – Driver in low supply voltage applications (e.g. lamps, LEDs) – Inductive load drivers (e.g. relay, buzzers and motors).
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