Download PBSS5240V Datasheet PDF
NXP Semiconductors
PBSS5240V
FEATURES - Low collector-emitter saturation voltage VCEsat - High collector current capability IC and ICM - High collector current gain (h FE) at high IC - High efficiency leading to reduced heat generation - Reduced printed-circuit board area requirements. APPLICATIONS - Power management: - DC-DC converter - Supply line switching - Battery charger - LCD back lighting. - Peripheral driver: - Driver in low supply voltage applications (e.g. lamps, LEDs) - Inductive load drivers (e.g. relay, buzzers and motors). DESCRIPTION PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN plement: PBSS4240V. 1 2 3 QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. - 40 - 1.8 - 2 <250 UNIT V A A mΩ handbook, halfpage 4 1, 2, 5, 6 3 4 MARKING TYPE...