PBSS2540MB datasheet, transistor equivalent, nexperia

Features and benefits

* Leadless ultra small SMD plastic package
* Low package height of 0.37 mm
* Low collector-emitter saturation voltage VCEsat
* High collector current capa.

Application

* DC-to-DC conversion
* Supply line switching
* Battery charger
* High efficiency due to less heat gene.

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB. 1.2 Features and benefits
* Leadless ultra small SMD plastic p.

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