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PBSS2540M
40 V, 0.5 A NPN low VCEsat (BISS) transistor
22 February 2018
Product data sheet
1. General description
Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M.
2. Features and benefits
• Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. • AEC-Q101 qualified
3. Applications
• Power management:
• DC-DC converter • Supply line switching • Battery charger • LCD backlighting. • Peripheral driver:
• Driver in low supply voltage applications (e.g. lamps and LEDs). • Inductive load drivers (e.g. relays, buzzers and motors).
4. Quick reference data
Table 1.