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PBSS2540M - NPN transistor

General Description

Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package.

PNP complement: PBSS3540M.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency leading to reduced heat generation.
  • Reduced printed-circuit board requirements.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 22 February 2018 Product data sheet 1. General description Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. • AEC-Q101 qualified 3. Applications • Power management: • DC-DC converter • Supply line switching • Battery charger • LCD backlighting. • Peripheral driver: • Driver in low supply voltage applications (e.g. lamps and LEDs). • Inductive load drivers (e.g. relays, buzzers and motors). 4. Quick reference data Table 1.