PBSS2515MB transistor equivalent, npn transistor.
* Leadless ultra small SMD plastic package
* Low package height of 0.37 mm
* Low collector-emitter saturation
voltage VCEsat
* High collector current capa.
* DC-to-DC conversion
* Supply line switching
* Battery charger
* High efficiency due to less heat gene.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS3515MB.
1.2 Features and benefits
* Leadless ultra small SMD plastic package
* .
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