GTRA362002FC hemt equivalent, thermally-enhanced high power rf gan on sic hemt.
input matching, high efficiency, and a thermally-enhanced package with earless flange.
GTRA362002FC Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Sin.
It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
GTRA362002FC Packag.
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with ear.
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