GTRA364002FC
GTRA364002FC is Thermally-Enhanced High Power RF GaN on SiC HEMT manufactured by Wolfspeed.
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400
- 3600 MHz
Description
The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It Features input matching, high efficency, and a themally-enhanced package with earless flange.
GTRA364002FC Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 220 mA, VGS(PEAK) = -5.8 V,
ƒ = 3600 MHz, 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
Efficiency
Gain
PAR @ 0.01% CCDF
-20
-40
0 25 gtra364002fc_g1
-60...
