GTRA263902FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

Wolfspeed

GTRA263902FC Datasheet Preview — Preview of GTRA263902FC PDF

Datasheet Details

Part number	GTRA263902FC
Manufacturer	Wolfspeed
File Size	524.97 KB
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet	GTRA263902FC-Wolfspeed.pdf

GTRA263902FC Product details

Description

The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications.

Features

input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 PN: GTRA263902FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 80 28 Efficiency 60 24 40 20 Gain 20 16 0 12 -20 8 -40 4 0 25 PAR @ 0.01% CCDF -60 gtra263902fc_g1 -80 30 35 40 45 50 55 Average Output Power (dBm) Feat.

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Published: Aug 5, 2023 |