GTRA263902FC
GTRA263902FC is Thermally-Enhanced High Power RF GaN on SiC HEMT manufactured by Wolfspeed.
Thermally-Enhanced High Power RF Ga N on Si C HEMT 370 W, 48 V, 2495
- 2690 MHz
Description
The GTRA263902FC is a 370-watt (P3d B) Ga N on Si C high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications. It Features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4 PN: GTRA263902FC
Peak/Average Ratio, Gain (d B) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 200 m A, VGS(PEAK) = -6.0 V, ƒ = 2690 MHz,
3GPP WCDMA signal, PAR = 10 d B,
3.84 MHz BW
Efficiency
Gain
-20
-40
0 25
PAR @ 0.01% CCDF
-60 gtra263902fc_g1
-80
30 35 40 45 50 55
Average Output Power (d Bm)
Features
- Ga N on Si C HEMT technology
- Input matched
- Typical Pulsed CW performance, 2690 MHz, 48 V, bined outputs
- Output power at P3d B = 370 W
- Efficiency = 70%
- Gain = 15 d B
- Capable of handling 10:1 VSWR @48 V, 56 W (CW) output power
- Human Body Model class 1A (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal...
