GTRA263902FC hemt equivalent, thermally-enhanced high power rf gan on sic hemt.
input matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4 PN: GTRA263902FC
Peak/Average Ratio, Gain (dB) Efficien.
It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37.
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flang.
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