GTRA412852FC Description
The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
GTRA412852FC Key Features
- GaN on SiC HEMT technology
- Input and output matched
- Typical pulsed CW performance, 4100 MHz, 48 V, 10 µs pulse width, 100 µs PP
- Output power at P3dB = 235 W
- Gain = 10 dB
- Efficiency = 45%
- Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power
- Human Body Model Class 1A (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS pliant