CGHV1J006D die equivalent, gan hemt die.
It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J006D
Features
* 17 dB Typ. Small Signal.
operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J006D
Features
* 17 dB Typ. Small.
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficienc.
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