Datasheet Details
| Part number | CGHV1J006D |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 461.32 KB |
| Description | GaN HEMT Die |
| Datasheet |
 CGHV1J006D Datasheet
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| Part number | CGHV1J006D |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 461.32 KB |
| Description | GaN HEMT Die |
| Datasheet |
CGHV1J006D Datasheet
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CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
CGHV1J006D | GaN HEMT Die | Wolfspeed |
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|---|---|
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