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CGHV1J006D Datasheet Preview

CGHV1J006D Datasheet

GaN HEMT Die

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CGHV1J006D
6 W, 18.0 GHz, GaN HEMT Die
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm
gate length fabrication process. This GaN-on-SiC product offers superior high
frequency, high efficiency features. It is ideal for a variety of applications
operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J006D
FEATURES
17 dB Typ. Small Signal Gain at 10 GHz
60% Typ. PAE at 10 GHz
6 W Typical Psat
40 V Operation
Up to 18GHz Operation
APPLICATIONS
Satellite Communications
PTP Communications Links
Marine Radar
Pleasure Craft Radar
• Port Vessel Traffic Services
• Broadband Amplifiers
• High Efficiency Amplifiers
Packaging Information
Bare die are shipped in Gel-Pak® containers or on tape.
Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV1J006D Datasheet Preview

CGHV1J006D Datasheet

GaN HEMT Die

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Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Drain-source Voltage
VDSS
100
Gate-source Voltage
VGS -10, +2
Storage Temperature
TSTG
-65, +150
Operating Junction Temperature
TJ 225
Maximum Forward Gate Current
IGMAX
1.2
Maximum Drain Current1
IDMAX
0.8
Thermal Resistance, Junction to Case (packaged)2
RθJC
17.5
Thermal Resistance, Junction to Case (die only)2
RθJC
13.2
Mounting Temperature
TS 320
Note1 Current limit for long term reliable operation.
Note2 Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CMC carrier.
Units
VDC
VDC
˚C
˚C
mA
A
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
85˚C
30 seconds
Electrical Characteristics (Frequency = 10 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current1
Drain-Source Breakdown Voltage
On Resistance
Gate Forward Voltage
RF Characteristics
Small Signal Gain
Saturated Power Output1
Drain Efficiency2
Intermodulation Distortion
Symbol
V(GS)TH
V(GS)Q
ISAT
VBD
RON
VG-ON
GSS
PSAT
η
IM3
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1 Scaled from PCM unit cell.
1 PSAT is defined as IG = 0.12 mA.
2 Drain Efficiency = POUT / PDC
VSWR
CGS
CDS
CGD
Min.
-3.8
1.0
100
Typ.
-3.0
-2.7
1.1
2.3
1.85
17
6
60
-30
2.0
0.35
0.5
Max.
–2.3
10 : 1
Units
Conditions
V
VDC
A
V
V
VDS = 10 V, ID = 1.2 mA
VDD = 40 V, IDQ = 70 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID =1.2 mA
VDS = 0.1 V, VGS = 0 V
IGS = 1.2 mA
dB VDD = 40 V, IDQ = 70 mA
W VDD = 40 V, IDQ = 70 mA
% VDD = 40 V, IDQ = 70 mA
dBc
VDD = 40 V, IDQ = 70 mA, POUT = 6 W PEP
No damage at all phase angles,
Y VDD = 40 V, IDQ = 70 mA,
POUT = 6 W CW
pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2 CGHV1J006D Rev 0.6
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV1J006D
Description GaN HEMT Die
Maker Cree
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