CGHV1J070D
CGHV1J070D is GaN HEMT Die manufactured by Cree.
features
. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J070D
FEATURES
- 17 d B Typ. Small Signal Gain at 10 GHz
- 60% Typ. PAE at 10 GHz
- 70 W Typical Psat
- 40 V Operation
- Up to 18GHz Operation
APPLICATIONS
- Satellite munications
- PTP munications Links
- Marine Radar
- Pleasure Craft Radar
- Port Vessel Traffic Services
- Broadband Amplifiers
- High Efficiency Amplifiers
Packaging Information
- Bare die are shipped in Gel-Pak® containers or on tape.
- Non-adhesive tacky membrane immobilizes die during shipment.
Rev 1.0
- May 2017
Subject to change without...
