CGHV14500
CGHV14500 is GaN HEMT manufactured by Cree.
500 W, 1200
- 1400 MHz, Ga N HEMT for L-Band Radar Systems
Cree’s CGHV14500 is a gallium nitride (Ga N) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2
- 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package.
Package Type:P4N4:0C1G17H,V41440510303
Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
545 540 530 530
1.4 GHz 530
Gain
Drain Efficiency
69 69 68 66 65
Note: Measured in the CGHV14500-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 41 d Bm.
Units W d B %
Features
- Reference design amplifier 1.2
- 1.4 GHz Operation
- FET tuning range UHF through 1800 MHz
- 530 W Typical Output Power
- 16 d B Power Gain
- 68% Typical Drain Efficiency
- <0.3 d B Pulsed Amplitude Droop
- Internally pre-matched on input, unmatched output
Subject to change without notice. .cree./rf
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