CGHV14500 Overview
CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through...
CGHV14500 Key Features
- Reference design amplifier 1.2
- 1.4 GHz Operation
- FET tuning range UHF through 1800 MHz
- 530 W Typical Output Power
- 16 dB Power Gain
- 68% Typical Drain Efficiency
- <0.3 dB Pulsed Amplitude Droop
- Internally pre-matched on input, unmatched output
- July 2015
