Overview: CGHV14500
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Package Type:P4N4:0C1G17H,V41440510303 Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz Output Power 545 540 530 530 1.4 GHz 530 Gain 16.4 16.3 16.2 16.2 16.2 Drain Efficiency 69 69 68 66 65 Note: Measured in the CGHV14500-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 41 dBm.
