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WPM2019 - Single P-Channel Power MOSFET

Description

The WPM2019 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-523.

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Datasheet Details

Part number WPM2019
Manufacturer WillSEMI
File Size 622.70 KB
Description Single P-Channel Power MOSFET
Datasheet download datasheet WPM2019 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WPM2019 Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) -20 Rds(on) (ȍ) 0.480@ VGS=̢4.5V 0.620@ VGS=̢2.5V 0.780@ VGS=̢1.8V WPM2019 Http://www.sh-willsemi.com D S G Descriptions SOT-523 The WPM2019 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2019 is Pb-free and Halogen-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-523 Applications z Driver for Relay, Solenoid, Motor, LED etc.
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