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Vishay Intertechnology Electronic Components Datasheet

SI4405DY Datasheet

P-Channel 30-V (D-S) MOSFET

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P-Channel 30-V (D-S) MOSFET
Si4405DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
- 30 0.0075 @ VGS = - 10 V
ID (A)
- 17
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4405DY
Si4405DY-T1 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFETS
D 100% Rg Tested
APPLICATIONS
D Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS - 30
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
- 17 - 11
- 13 - 9
- 60
- 2.9 - 1.30
3.5 1.6
2.1 1.0
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71913
S-31726—Rev. D, 18-Aug-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
29
67
13
Maximum
35
80
16
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4405DY Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4405DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "20 V
VDS = - 24 V, VGS = 0 V
VDS = - 24 V, VGS = 0 V, TJ = 70_C
VDS = - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 17 A
VDS = - 15 V, ID = - 17 A
IS = - 2.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 15 V, VGS = - 10 V, ID = - 17 A
VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
IF = - 2.9 A, di/dt = 100 A/ms
Min Typ Max Unit
- 1.0 - 3.0 V
"100
nA
-1
mA
- 10
- 30 A
0.006
0.0075
W
47 S
- 0.75
- 1.1
V
105 160
17.5
nC
29.5
3 4 6.5 W
25 40
15 25
190 285 ns
80 120
70 110
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
VGS = 10 thru 5 V
50
40
4V
30
20
10
0
012345
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
60
50
40
30
20
TC = 125_C
10
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71913
S-31726—Rev. D, 18-Aug-03


Part Number SI4405DY
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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