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Vishay Intertechnology Electronic Components Datasheet

SI4403DY Datasheet

P-Channel 1.8-V (G-S) MOSFET

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P-Channel 1.8-V (G-S) MOSFET
Si4403DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.017 @ VGS = –4.5 V
–20 0.023 @ VGS = –2.5 V
0.032 @ VGS = –1.8 V
ID (A)
–9
–7
–6
FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
– Game Stations
– Notebooks
– Desktops
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–20
"8
–9 –6.5
–7 –5.0
–30
–2.1
–1.3
2.5 1.35
1.6 0.87
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71683
S-04393—Rev. A, 13-Aug-01
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
38
71
19
Maximum
50
92
25
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI4403DY Datasheet

P-Channel 1.8-V (G-S) MOSFET

No Preview Available !

Si4403DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 70_C
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 7.4 A
VGS = 2.5 V, ID = 6.3 A
VGS = 1.8 V, ID = 5.5 A
VDS = 15 V, ID = 7.4 A
IS = 1.3 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a Pulse test; pulse width v 300 ms, duty cycle v 2%.
b Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 5 V, ID = 7.4 A
VDD = 10 V, RL = 15 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 1.3 A, di/dt = 100 A/ms
Min Typ Max Unit
0.45
20
0.014
0.018
0.024
28
0.64
"100
1
10
0.017
0.023
0.032
1.1
V
nA
mA
A
W
W
S
V
30.5
50
5.3 nC
3.8
30 50
30 50
110 200 ns
65 110
45 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 5 thru 2 V
24
30
24
18
1.5 V
12
18
12
6
0
0
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2
01V
246
VDS Drain-to-Source Voltage (V)
8
6
0
0.0
Transfer Characteristics
TC = 125_C
25_C
55_C
0.5 1.0 1.5
VGS Gate-to-Source Voltage (V)
2.0
Document Number: 71683
S-04393Rev. A, 13-Aug-01


Part Number SI4403DY
Description P-Channel 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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