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Vishay Intertechnology Electronic Components Datasheet

SI4401DY Datasheet

P-Channel 40-V (D-S) MOSFET

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P-Channel 40-V (D-S) MOSFET
Si4401DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0155 @ VGS = –10 V
–40
0.0225 @ VGS = –4.5 V
ID (A)
–10.5
–8.7
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
SSS
G
DDDD
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–40
"20
–10.5
–8.7
–8.3
–5.9
–50
–2.7
–1.36
3.0 1.5
1.9 0.95
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71226
S-03452—Rev. C, 09-Apr-01
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
33
70
16
Maximum
42
84
21
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI4401DY Datasheet

P-Channel 40-V (D-S) MOSFET

No Preview Available !

Si4401DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 32 V, VGS = 0 V
VDS = 32 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 10.5 A
VGS = 4.5 V, ID = 8.7 A
VDS = 15 V, ID = 10.5 A
IS = 2.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 5 V, ID = 10.5 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0
30
"100
1
10
0.013
0.0185
26
0.74
0.0155
0.0225
1.1
V
nA
mA
A
W
S
V
37.5
50
14.3
nC
10.7
17 30
18 30
ns
122 190
55 85
3.8 W
45 ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 10 thru 5 V
40 4 V
30
20
10
0
0
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2
3V
2V
2468
VDS Drain-to-Source Voltage (V)
10
Transfer Characteristics
50
40
30
20
TC = 125_C
10
25_C
55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS Gate-to-Source Voltage (V)
Document Number: 71226
S-03452Rev. C, 09-Apr-01


Part Number SI4401DY
Description P-Channel 40-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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