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Si4401DDY Datasheet

P-Channel 40V (D-S) MOSFET

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P-Channel 40 V (D-S) MOSFET
Si4401DDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 40
RDS(on) ()
0.015 at VGS = - 10 V
0.022 at VGS = - 4.5 V
ID (A)a
- 16.1
- 13.3
Qg (Typ.)
33 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• POL
S
G
Top View
Ordering Information: Si4401DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
D
P-Channel MOSFET
Limit
- 40
± 20
- 16.1
- 12.9
- 10.2b, c
- 8.2b, c
- 50
- 5.3
- 2.1b, c
- 28
39
6.3
4
2.5b, c
1.6b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
Symbol
RthJA
RthJF
Typical
37
16
Maximum
50
20
Unit
V
A
mJ
W
°C
Unit
°C/W
www.vishay.com
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Vishay Intertechnology Electronic Components Datasheet

Si4401DDY Datasheet

P-Channel 40V (D-S) MOSFET

No Preview Available !

Si4401DDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
VDS/TJ
VGS(th)/TJ
VGS(th)
ID = - 250 µA
VDS = VGS , ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = - 40 V, VGS = 0 V
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS - 10 V, ID = - 10.2 A
VGS - 4.5 V, ID = - 8.4 A
VDS = - 15 V, ID = - 10.2 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 20 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 20 V, VGS = - 10 V, ID = - 10.2 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 20 V, VGS = - 4.5 V, ID = - 10.2 A
f = 1 MHz
VDD = - 20 V, RL = 2.4
ID - 8.2 A, VGEN = - 4.5 V, Rg = 1
VDD = - 20 V, RL = 2.4
ID - 8.2 A, VGEN = - 10 V, Rg = 1
TC = 25 °C
IS = - 8.2 A, VGS 0 V
IF = - 8.2 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
- 40
- 1.2
- 25
0.4
Typ. Max. Unit
- 36
5
0.012
0.018
37
- 2.5
± 100
-1
-5
0.015
0.022
V
mV/°C
V
nA
µA
A
S
3007
335
291
64
33
9.8
15.7
2
57
50
40
17
13
11
45
9
95
50
4
86
75
60
26
20
20
68
18
- 0.8
36
41
20
16
- 5.3
- 50
- 1.2
54
62
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10


Part Number Si4401DDY
Description P-Channel 40V (D-S) MOSFET
Maker Vishay
Total Page 9 Pages
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