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SI4403CDY - P-Channel MOSFET

Features

  • ID (A)d - 13.4 - 12 - 10.5 36.5 nC Qg (Typ. ).

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Datasheet Details

Part number SI4403CDY
Manufacturer Vishay
File Size 258.83 KB
Description P-Channel MOSFET
Datasheet download datasheet SI4403CDY Datasheet

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New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES ID (A)d - 13.4 - 12 - 10.5 36.5 nC Qg (Typ.) PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.0155 at VGS = - 4.5 V 0.0195 at VGS = - 2.5 V 0.0250 at VGS = - 1.8 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4403CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D D D D G • Adaptor Switch • High Current Load Switch • Notebook S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.