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Vishay Intertechnology Electronic Components Datasheet

SI1906DL Datasheet

N-Channel 20-V (D-S) MOSFET

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N-Channel 20-V (D-S) MOSFET
Si1906DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
2.0 @ VGS = 4.5 V
2.5 @ VGS = 2.5 V
ID (mA)
250
150
SOT-363
SC-70 (6-Leads)
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
Top View
Marking Code
PC XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
PD
TJ, Tstg
250
200
500
0.20
0.13
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Symbol
RthJA
Limit
625
Unit
V
mA
W
_C
Unit
_C/W
Document Number: 71305
S-01885—Rev. A, 28-Aug-00
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1906DL Datasheet

N-Channel 20-V (D-S) MOSFET

No Preview Available !

Si1906DL
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 0 V, ID = 10 mA
VDS = VGS, ID = 50 mA
VDS = 0 V, VGS = "8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55_C
VDS = 5.0 V, VGS = 2.5 V
VDS = 8.0 V, VGS = 4.5 V
VGS = 2.5 V, ID = 150 mA
VGS = 4.5 V, ID = 250 mA
VDS = 2.5 V, ID = 50 mA
IS = 50 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb, c
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = 5.0 V, VGS = 4.5 V, ID = 100 mA
VDS = 5.0 V, VGS = 0 V, f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 3.0 V, RL = 100 W
ID = 0.25 A, VGEN = 4.5 V, RG = 10 W
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. For design only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Min Typ Max Unit
20 24
V
0.4 0.9 1.5
"2
0.001
"100
100
nA
5 mA
120 160
400 800
mA
1.6 2.5
W
1.2 2.0
200 mS
0.7 1.2 V
350 450
25 pC
100
20
14 pF
5
7 12
25 35
ns
19 30
9 15
www.vishay.com
2
Document Number: 71305
S-01885—Rev. A, 28-Aug-00


Part Number SI1906DL
Description N-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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