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SI1901DL Datasheet

P-Channel 20-V (D-S) MOSFET

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New Product
P-Channel 20-V (D-S) MOSFET
Si1901DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
3.8 @ VGS = –4.5 V
5.0 @ VGS = –2.5 V
ID (mA)
–180
–100
SOT-363
SC-70 (6-Leads)
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
Top View
Marking Code
QD XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
–20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
PD
TJ, Tstg
–180
–140
–500
0.20
0.13
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Symbol
RthJA
Limit
625
Unit
V
mA
W
_C
Unit
_C/W
Document Number: 71304
S-01886—Rev. A, 28-Aug-00
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1901DL Datasheet

P-Channel 20-V (D-S) MOSFET

No Preview Available !

Si1901DL
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 0 V, ID = –10 mA
VDS = VGS, ID = –50 mA
VDS = 0 V, VGS = "8 V
VDS = –20 V, VGS = 0 V
VDS = –20 V, VGS = 0 V, TJ = 55_C
VGS v –4.5 V, VDS = –8.0 V
VGS v –2.5 V, VDS = –5.0 V
VGS = –4.5 V, ID = –180 mA
VGS = –2.5 V, ID = 75 mA
VDS = –2.5 V, ID = –50 mA
IS = –50 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb, c
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = –5.0 V, VGS = –4.5 V, ID = –100 mA
VDS = –5.0 V, VGS = 0 V, f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = –3.0 V, RL = 100 W
ID = –0.25 A, VGEN = –4.5 V, RG = 10 W
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. For design only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Min Typ Max Unit
–20
–0.4
–400
–120
–24
–0.9
"2
–0.001
2.6
4.0
200
–0.7
–1.5
"100
–100
–1
3.8
5.0
–1.2
V
nA
mA
mA
W
mS
V
350 450
25 pC
125
20
14 pF
5
7 12
25 35
ns
19 30
9 15
www.vishay.com
2
Document Number: 71304
S-01886—Rev. A, 28-Aug-00


Part Number SI1901DL
Description P-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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