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SI1900DL Datasheet

Dual N-Channel 30-V (D-S) MOSFET

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Dual N-Channel 30 V (D-S) MOSFET
Si1900DL
Vishay Siliconix
#
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.480 at VGS = 10 V
0.700 at VGS = 4.5 V
ID (A)
0.63
0.52
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Marking Code
PB XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1900DL-T1-E3 (Lead (Pb)-free)
Si1900DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Pulsed Drain Current
Continuous Source-Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
0.63
0.45
0.25
0.30
0.16
Steady State
30
± 20
0.59
0.43
1.0
0.23
0.27
0.14
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t5s
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Symbol
RthJA
RthJF
Typical
360
400
300
Maximum
415
460
350
Unit
°C/W
Document Number: 71251
S10-1054-Rev. F, 03-May-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1900DL Datasheet

Dual N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si1900DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 0.59 A
VGS = 4.5 V, ID = 0.2 A
VDS = 10 V, ID = 0.59 A
IS = 0.23 A, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 10 V, ID = 0.59 A
VDD = 15 V, RL = 30 Ω
ID 0.5 A, VGEN = 10 V, Rg = 6 Ω
IF = 0.23 A, dI/dt = 100 A/µs
Min. Typ. Max. Unit
1.0 3 V
± 100
nA
1
µA
5
1.0 A
0.410
0.600
0.480
0.700
Ω
0.75 S
0.8 1.2
V
0.86
0.24
0.08
5
8
8
7
15
1.4
10
15
15
15
30
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
VGS = 10 V thru 4 V
0.8
1.0
0.8
0.6 0.6
0.4
3V
0.2
0.0
0.0
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
0.4
TC = 125 °C
0.2
25 °C
- 55 °C
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
2
Document Number: 71251
S10-1054-Rev. F, 03-May-10


Part Number SI1900DL
Description Dual N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 9 Pages
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