900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI1905DL Datasheet

Dual P-Channel 1.8-V (G-S) MOSFET

No Preview Available !

New Product
Si1905DL
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.600 @ VGS = –4.5 V
–8 0.850 @ VGS = –2.5 V
1.200 @ VGS = –1.8 V
ID (A)
"0.60
"0.50
"0.42
SOT-363
SC-70 (6-LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
Marking Code
QB XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–8
"8
"0.60
"0.57
"0.43
"0.41
"1.0
–0.25
–0.23
0.30
0.27
0.16
0.14
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71082
S-99188—Rev. A, 01-Nov-99
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

SI1905DL Datasheet

Dual P-Channel 1.8-V (G-S) MOSFET

No Preview Available !

Si1905DL
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "8 V
VDS = –6.4 V, VGS = 0 V
VDS = –6.4 V, VGS = 0 V, TJ = 85_C
VDS = –5 V, VGS = –4.5 V
VGS = –4.5 V, ID = –0.57 A
VGS = –2.5 V, ID = –0.48 A
VGS = –1.8 V, ID = –0.20 A
VDS = –10 V, ID = –0.57 A
IS = –0.23 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = –4 V, VGS = –4.5 V, ID = –0.57 A
VDD = –4 V, RL = 8 W
ID ^ –0.5 A, VGEN = –4.5 V, RG = 6 W
IF = –0.23 A, di/dt = 100 A/ms
Min Typ Max Unit
–0.45
–1.0
0.51
0.720
1.0
1.2
–0.8
"100
–1
–5
0.600
0.850
1.200
–1.2
V
nA
mA
A
W
S
V
1.5 2.3
0.17
nC
0.16
6 12
25 50
10 20 ns
10 20
20 40
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.0
VGS = 5 thru 2.5 V
0.8
Output Characteristics
2V
0.6
1.5 V
0.4
0.2
0
0
1V
0.5 1.0 1.5 2.0 2.5
VDS – Drain-to-Source Voltage (V)
3.0
www.vishay.com S FaxBack 408-970-5600
2-2
1.0
0.8
0.6
0.4
0.2
0
0
Transfer Characteristics
TC = –55_C
25_C
125_C
0.5 1.0 1.5 2.0
VGS – Gate-to-Source Voltage (V)
2.5
Document Number: 71082
S-99188—Rev. A, 01-Nov-99


Part Number SI1905DL
Description Dual P-Channel 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
PDF Download

SI1905DL Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SI1905DL Dual P-Channel 1.8-V (G-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy