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Vishay Intertechnology Electronic Components Datasheet

SI1902DL Datasheet

Dual N-Channel 20-V (D-S) MOSFET

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Si1902DL
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.385 @ VGS = 4.5 V
0.630 @ VGS = 2.5 V
ID (A)
0.70
0.54
SOT-363
SC-70 (6-LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
Marking Code
PA XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
0.70
0.50
0.25
0.30
0.16
20
"12
1.0
-55 to 150
0.66
0.48
0.23
0.27
0.14
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71080
S-21374β€”Rev. E, 12-Aug-02
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1902DL Datasheet

Dual N-Channel 20-V (D-S) MOSFET

No Preview Available !

Si1902DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 0.66 A
VGS = 2.5 V, ID = 0.40 A
VDS = 10 V, ID = 0.66 A
IS = 0.23 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 0.66 A
VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W
IF = 0.23 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6 1.5 V
"100
nA
1
mA
5
1.0 A
0.320
0.560
1.5
0.8
0.385
0.630
1.2
W
S
V
0.8 1.2
0.06 nC
0.30
10 20
16 30
10 20 ns
10 20
20 40
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
VGS = 5 thru 2.5 V
0.8
2V
0.6
Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
0.0
1.5 V
1V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
3.0
0.4
0.2
0.0
0.0
TC = 125_C
25_C
-55 _C
0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
2.5
www.vishay.com
2
Document Number: 71080
S-21374β€”Rev. E, 12-Aug-02


Part Number SI1902DL
Description Dual N-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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