TMBS® TO-263AB K
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD.

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRI.

VBT3045BP-M3

VBT3045C

VBT3045CBP

VBT3045CBP-E3

VBT3045CBP-M3

VBT3060C

VBT3060C-E3

VBT3060G-E3

VBT3080C-E3

VBT3080S

VBT3080S-E3

VBT30L60C

VBT10200C

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