SiR5710DP - N-Channel MOSFET

Features

TrenchFET® Gen V power MOSFET.
Very low RDS x Qg figure-of-merit (FOM).
Tuned for the lowest RDS x Qoss FOM.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SiR5710DP
Manufacturer	Vishay
File Size	176.68 KB
Description	N-Channel MOSFET
Datasheet	SiR5710DP Datasheet

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Full PDF Text Transcription

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www.vishay.com SiR5710DP Vishay Siliconix N-Channel 150 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 150 0.0315 0.037 7.7 26.8 Single FEATURES • TrenchFET® Gen V power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Aug 1, 2023 |