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SIR-563ST3F - Infrared light emitting diode

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Features

  • 1) High efficiency, high output PO = 11.0 mW (IF = 50 mA). 2) Wide radiation angle θ 1 / 2 = 15deg. 3) Emission spectrum well suited to silicon detectors (λP = 940 nm). 4) Good current-optical output linearity. 5) Long life, high reliability. 6) Low cost, clear epoxy resin package. FAbsolute maximum ratings (Ta = 25_C) 182 Sensors FElectrical and optical characteristics (Ta = 25_C) SIR-563ST3F FElectrical and optical characteristic curves 183 Sensors SIR-563ST3F 184.

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Datasheet Details

Part number SIR-563ST3F
Manufacturer ROHM
File Size 53.66 KB
Description Infrared light emitting diode
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Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for compact optical control equipment. FApplications Optical control equipment Light source for remote control devices FExternal dimensions (Units: mm) FFeatures 1) High efficiency, high output PO = 11.0 mW (IF = 50 mA). 2) Wide radiation angle θ 1 / 2 = 15deg. 3) Emission spectrum well suited to silicon detectors (λP = 940 nm). 4) Good current-optical output linearity. 5) Long life, high reliability. 6) Low cost, clear epoxy resin package.
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