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SIR-56ST3F - Infrared light emitting diode

Datasheet Summary

Features

  • 1) High efficiency, high output PO = 8.0 mW (IF = 50 mA). 2) Emission spectrum well suited to silicon detectors. 3) Good current-optical output linearity. 4) Long life, high reliability. 5) Low cost, clear epoxy resin package. FAbsolute maximum ratings (Ta = 25_C) 176 Sensors FElectrical and optical characteristics (Ta = 25_C) SIR-56ST3F FElectrical and optical characteristic curves 177 Sensors SIR-56ST3F 178.

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Datasheet Details

Part number SIR-56ST3F
Manufacturer ROHM
File Size 53.22 KB
Description Infrared light emitting diode
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Sensors Infrared light emitting diode, top view type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950 nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household remote control devices. FApplications Optical control equipment Light source for remote control devices FExternal dimension (Units: mm) FFeatures 1) High efficiency, high output PO = 8.0 mW (IF = 50 mA). 2) Emission spectrum well suited to silicon detectors. 3) Good current-optical output linearity. 4) Long life, high reliability. 5) Low cost, clear epoxy resin package.
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