SIR5402DP - N-Channel 40V MOSFET

Datasheet Summary

Features

TrenchFET® Gen IV standard level MOSFET.
High Vth design to avoid noise.
Optimal Qgd / Qgs ratio.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

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Datasheet Details

Part number	SIR5402DP
Manufacturer	Vishay
File Size	1.09 MB
Description	N-Channel 40V MOSFET
Datasheet	SIR5402DP Datasheet
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Full PDF Text Transcription

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www.vishay.com SIR5402DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) at VGS = 7.5 V ID (A) a Configuration 1 2S 3S 4S G Bottom View 40 0.0012 0.0017 63.5 201.5 Single FEATURES • TrenchFET® Gen IV standard level MOSFET • High Vth design to avoid noise • Optimal Qgd / Qgs ratio • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Jun 6, 2025 |